Part Number Hot Search : 
S345R 2SD113 MN100 C3216X7R 2SK80 ISL88021 AD779 J074NF10
Product Description
Full Text Search
 

To Download SST2623 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 SST2623
Elektronische Bauelemente -2A, -30V,RDS(ON) 170m[
P-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
SOT-26
Description
0.37Ref. 0.20 0.60 Ref. 2.60 3.00
The SST2623 utiltzed advance processing techniques to achieve the lowest possible on-resistance, extermely efficient and cost-effectiveness device.
The SST2623 is universally used for all commercial-industrial applications.
0.30 0.55 0.95 Ref. 2.70 3.10 0~0.1 0.25
1.40 1.80
0 o 10
o
1.20Ref.
Features
* Low On-Resistance * Low Gate Charge
D1 D2
Dimensions in millimeters
D1 6
S1 5
D2 4
G1
G2
Date Code
2623
S1
S2
1 G1
2 S2
3 G2
Absolute Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3 Continuous Drain Current 3 Pulsed Drain Current 1 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg
Symbol
VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C
o o o
Ratings
-30
20 -2 -1.6 -20 1.2 0.01 -55~+150
Unit
V V A A A W
W/ C
o o
C
Thermal Data
Parameter
Thermal Resistance Junction-ambient3 (Max)
Symbol
Rthj-a
Ratings
110
o
Unit
C /W
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 4
SST2623
Elektronische Bauelemente -2A, -30V,RDS(ON) 170m[
P-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=70 C) Static Drain-Source On-Resistance
2
o
Symbol
BVDSS BVDS/ Tj VGS(th) IGSS IDSS
Min.
-30
_
Typ.
_
Max.
_ _
Unit
V V/ oC V nA uA uA
Test Condition
VGS=0V, ID=-250uA Reference to 25oC ,ID=-1mA VDS=VGS, ID=-250uA VGS= 20V VDS=-30V,VGS=0 VDS=-24V,VGS=0 VGS=-10V, ID=-2A VGS=-4.5V, ID=-1.6A
-0.02
_ _ _ _
-1.0
_ _ _ _
-3.0
100
-1 -25 170 280
4.5
_ _ _ _ _ _ 240 _ _
o
_ _ 2.8 0.5 1.4 5 6 15 3 150 42 32 2
RDS(ON) Qg Qgs Qgd Td(ON) Tr Td(Off) Tf Ciss Coss Crss Gfs
_ _ _ _ _ _ _ _ _ _ _
m[
Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance
nC
ID=-2A VDS=-24V VGS=-4.5V
VDD=-15V ID=-1A nS VGS=-10V RG=3.3[ RD=15 [
pF
VGS=0V VDS=-25V f=1.0MHz
_
_
S
VDS=-5V, ID=-2A
Source-Drain Diode
Parameter
Forward On Voltage 2
Reverse Recovery Time 2 Reverse Recovery Charge
Symbol
VDS
Trr Qrr
Min.
_
Typ.
_
Max.
-1.2
Unit
V
Test Condition
IS=1.0A, VGS=0V.
Is=-2A, V GS=0V dl/dt=100A/uS
_ _
20 13
_ _
nS nC
Notes: 1.Pulse width limited by safe operating area. 2.Pulse widthO 300us, dutycycleO2%.
3.Surface mounted on 1 in copper pad of FR4 board; 135 OC/W when mounted on min. copper pad.
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
2
01-Jun-2002 Rev. A
Page 2 of 4
SST2623
Elektronische Bauelemente -2A, -30V,RDS(ON) 170m[
P-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction Temperature
Fig 5. Forward Characteristics of Reverse Diode
http://www.SeCoSGmbH.com/
Fig 6. Gate Threshold Voltage v.s. Junction Temperature
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 3of 4
SST2623
Elektronische Bauelemente -2A, -30V,RDS(ON) 170m[
P-Channel Enhancement Mode Power Mos.FET
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 4 of 4


▲Up To Search▲   

 
Price & Availability of SST2623

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X